Application of laser testing in study of SEE mechanisms in 16-Mbit DRAMs

Authors
Duzellier, S Falguere, D Guibert, L Pouget, V Fouillat, P Ecoffet, R
Citation
S. Duzellier et al., Application of laser testing in study of SEE mechanisms in 16-Mbit DRAMs, IEEE NUCL S, 47(6), 2000, pp. 2392-2399
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
47
Issue
6
Year of publication
2000
Part
3
Pages
2392 - 2399
Database
ISI
SICI code
0018-9499(200012)47:6<2392:AOLTIS>2.0.ZU;2-I
Abstract
A laser experiment has been carried out on the SMJ416400 and LUNA-E 16Mbit DRAMs in order to identify the mechanism leading to severe row/column error s. The error signatures observed with heavy ions are reproduced, related to physical locations on the die and the conditions of occurrence are studied (temporal behavior..,). The question of laser to ion equivalence is discus sed.