Lz. Scheick et al., Measurement of the effective sensitive volume of FAMOS cells of an ultraviolet erasable programmable read-only memory, IEEE NUCL S, 47(6), 2000, pp. 2428-2434
A method is described for measuring the sensitive volume of the oxide which
makes up the collection region for erasure surrounding the floating gate o
f the FAMOS cell of a UVPROM using the data acquired from the output of the
pins of the device. A direct measurement of the dose required to erase the
Floating gate Avalanche injected metal oxide silicon (FAMOS) cell yields a
measurement of the volume of oxide which collects the charge. Another meth
od using target theory to determine the sensitive volume of the device is a
lso presented with good agreement between the methods. The sensitive volume
depends on the LET of the radiation. The ramifications for microdosimetry
and cell failure are discussed as well as for the long term use aspects of
nonvolatile memories.