High-energy proton-induced dark signal in silicon charge coupled devices

The distribution of dark signal in 10 and 60 MeV proton irradiated charge-c oupled devices is discussed and a newly modified theory of proton-induced d ark signal nonuniformity is compared with measurements made on devices from Marconi Applied Technologies with differing pixel sizes. The models previo usly developed by other workers have been modified to enable better agreeme nt with measurement at low proton fluency, The scaling of bulk dark signal with damage energy as a function of temperature is presented. This makes po ssible predictions of the mean bulk dark signal and its distribution for a wide range of device types, temperatures and proton fluencies. The dark sig nal increase from Co-60 gamma and neutron irradiation is also discussed.