Citation
M. Cohen et Jp. David, Radiation-induced dark current in CMOS active pixel sensors, IEEE NUCL S, 47(6), 2000, pp. 2485-2491
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499
→ ACNP
Volume
47
Issue
6
Year of publication
2000
Part
3
Pages
2485 - 2491
Database
ISI
SICI code
0018-9499(200012)47:6<2485:RDCICA>2.0.ZU;2-O
Abstract
Degradation behavior of CMOS active pixel sensors (APS) exposed to protons
and Cobalt60 is presented. The most sensitive parameter is the dark current
: the mean value of the degradation is always dominated by ionizing effects
.