Energy dependence of proton damage in AlGaAs light-emitting diodes

We measure the energy dependence of proton-induced LED degradation using la rge numbers of devices and incremental exposures to gain high confidence in the proton energy dependence and device-to-device variability of damage. W e compare single versus double heterojunction AlGaAs technologies (emitting at 880 mm and 830 nm, respectively) to previous experimental and theoretic al results. We also present a critical review of the use of nonionizing ene rgy loss in AlGaAs for predictions of on-orbit degradation and assess the u ncertainties inherent in this approach.