Characterization of proton damage in light-emitting diodes

Citation
Ah. Johnston et Tf. Miyahira, Characterization of proton damage in light-emitting diodes, IEEE NUCL S, 47(6), 2000, pp. 2500-2507
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
47
Issue
6
Year of publication
2000
Part
3
Pages
2500 - 2507
Database
ISI
SICI code
0018-9499(200012)47:6<2500:COPDIL>2.0.ZU;2-Y
Abstract
Proton damage is investigated for several types of modern light-emitting di odes (LEDs), examining the damage from the standpoint of older models based on lifetime degradation;as well as the simpler method of normalized degrad ation. An empirical model is developed to describe injection-enhanced annea ling in amphoterically doped LEDs. Experimental results oh "aged" devices s how that wearout degradation does not decrease the sensitivity of de,ices t o radiation damage.