A comparison of the effects of gamma irradiation on SiGeHBT and GaAsHBT technologies

Authors
Zhang, SM Niu, GF Cressler, JD Mathew, SJ Gogineni, U Clark, SD Zampardi, P Pierson, RL
Citation
Sm. Zhang et al., A comparison of the effects of gamma irradiation on SiGeHBT and GaAsHBT technologies, IEEE NUCL S, 47(6), 2000, pp. 2521-2527
Citations number
29
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
47
Issue
6
Year of publication
2000
Part
3
Pages
2521 - 2527
Database
ISI
SICI code
0018-9499(200012)47:6<2521:ACOTEO>2.0.ZU;2-D
Abstract
A comparison of the effects of gamma irradiation on Silicon-Germanium (SiGe ) Heterojunction Bipolar Transistor (HBT) and Gallium-Arsenide (GaAs) HBT t echnologies is reported. DC and Radio Frequency (RF) performance as well as the low frequency noise are; investigated for gamma doses up to 1 Mrad(Si) . The results indicate that both SiGe and GaAs HBT technologies are toleran t to gamma irradiation.