Analysis of radiation effects on individual DRAM cells

Authors
Scheick, LZ Guertin, SM Swift, GM
Citation
Lz. Scheick et al., Analysis of radiation effects on individual DRAM cells, IEEE NUCL S, 47(6), 2000, pp. 2534-2538
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
47
Issue
6
Year of publication
2000
Part
3
Pages
2534 - 2538
Database
ISI
SICI code
0018-9499(200012)47:6<2534:AOREOI>2.0.ZU;2-L
Abstract
A novel way to measure the radiation characteristics of DRAM memory. cells is presented. Radiation exposure tends to drive retention times lower for c ells. The change in retention time (the time period required for a cell to upset without refreshing) is used to measure the effect of irradiation on t he DRAM cells. Both the radiation response of a single DRAM cell and the re sponse of all cells as a statistical whole are analyzed.