Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar ICs

Citation
Mr. Shaneyfelt et al., Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar ICs, IEEE NUCL S, 47(6), 2000, pp. 2539-2545
Citations number
31
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
47
Issue
6
Year of publication
2000
Part
3
Pages
2539 - 2545
Database
ISI
SICI code
0018-9499(200012)47:6<2539:TEAELD>2.0.ZU;2-P
Abstract
A pre-irradiation elevated-temperature stress is shown to have a significan t impact on the radiation response of a linear bipolar circuit. Thermal cyc ling can lead to part-to-part variability in the radiation response of circ uits packaged from the same wafer. In addition, it is demonstrated that a p re-irradiation elevated-temperature stress can significantly impact the enh anced low dose rate sensitivity (ELDRS) of the LM111 voltage comparator. Th ermal stress moderates and, in some cases, eliminates ELDRS, The data are c onsistent with space charge models. These results suggest that there may be a connection between the mechanisms responsible for thermal-stress effects and ELDRS in linear circuits. Implications of these results for hardness a ssurance testing and mechanisms are discussed.