A two-step modeling approach is developed for single-event transients in li
near circuits that uses the PISCES device simulation program to calculate t
ransient currents in key internal transistor structures. Those currents are
then applied at the circuit level using the SPICE circuit analysis program
. The results explain the dependence of transients on input differential vo
ltage, as well as the dependence of transient signals on output loading con
ditions. Error rate predictions based on laboratory testing and modeling ar
e in close agreement with the observed number of "trips" in comparators wit
hin power control modules that have operated in a deep space environment fo
r nearly three years.