A model for single-event transients in comparators

Citation
Ah. Johnston et al., A model for single-event transients in comparators, IEEE NUCL S, 47(6), 2000, pp. 2624-2633
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
47
Issue
6
Year of publication
2000
Part
3
Pages
2624 - 2633
Database
ISI
SICI code
0018-9499(200012)47:6<2624:AMFSTI>2.0.ZU;2-V
Abstract
A two-step modeling approach is developed for single-event transients in li near circuits that uses the PISCES device simulation program to calculate t ransient currents in key internal transistor structures. Those currents are then applied at the circuit level using the SPICE circuit analysis program . The results explain the dependence of transients on input differential vo ltage, as well as the dependence of transient signals on output loading con ditions. Error rate predictions based on laboratory testing and modeling ar e in close agreement with the observed number of "trips" in comparators wit hin power control modules that have operated in a deep space environment fo r nearly three years.