Analysis of SEB and SEGR in super-junction MOSFETs

Authors
Huang, S Amaratunga, GAJ Udrea, F
Citation
S. Huang et al., Analysis of SEB and SEGR in super-junction MOSFETs, IEEE NUCL S, 47(6), 2000, pp. 2640-2647
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
ISSN journal
00189499 → ACNP
Volume
47
Issue
6
Year of publication
2000
Part
3
Pages
2640 - 2647
Database
ISI
SICI code
0018-9499(200012)47:6<2640:AOSASI>2.0.ZU;2-S
Abstract
The electric field distribution in the super junction power MOSFET is analy zed using analytical modeling and numerical simulations in this paper. The single-event burn-out (SEB) and single-event gate rupture (SEGR) phenomena in this device are studied in detail. It is demonstrated that the super jun ction device is much less sensitive to SEE and SEGR compared to the standar d power MOSFET. The physical mechanism is explained.