CdTe detectors' response to irradiation with high-energy gamma-rays

In recent years the performance of room-temperature semiconductor detectors such as CdTe has improved and they are now suitable candidates for several applications. However, some key parameters that can severely affect such p erfomances have not been measured in detail yet. We have extended previous studies on the radiation damage of a set of CdTe detectors irradiated in a Co-60 gamma-cell in a wide range of doses. A full characterization of the p erformance of irradiated detectors has been obtained by means of spectrosco pic, electrostatic, photo-induced current transient spectroscopy and photo- deep level transient spectroscopy measurements to quote the energy resoluti on, the leakage current, the activation energy and capture cross-section of deep level defects, respectively.