Radiation damage studies of silicon microstrip sensors

Various types of large area silicon microstrip detectors were fabricated fo r the development of radiation-tolerant detectors that will operate in the LHC ATLAS SCT. The detectors were irradiated with 12-GeV protons at KEK to fluences of 1.7x10(14) and 4.2x10(14) protons/cm(2). Irradiated samples inc luded n-on-n detectors with 4 k Omega cm bulk resistivity and p-on-n detect ors with 1 k Omega cm and 4 kRcm bulk resistivities. Four patterns of p-sto p structures are configured in the n-on-n detectors. Although Hamamatsu fab ricated most of the detectors, p-on-n detectors by SINTEF are also included , as well as those fabricated in a modified process by Hamamatsu. The detec tor performances after irradiation that are compared are the probability of creation of faulty coupling capacitors, C-V characteristics, charge collec tion curves, and total leakage current. The p-on-n detectors are similar to the n-on-n detectors in these performances, and will remain operational in the ATLAS radiation environment.