Fast high-voltage pulse generation using nonlinear capacitors

Citation
Gh. Rim et al., Fast high-voltage pulse generation using nonlinear capacitors, IEEE PLAS S, 28(5), 2000, pp. 1362-1367
Citations number
4
Categorie Soggetti
Physics
Journal title
IEEE TRANSACTIONS ON PLASMA SCIENCE
ISSN journal
00933813 → ACNP
Volume
28
Issue
5
Year of publication
2000
Pages
1362 - 1367
Database
ISI
SICI code
0093-3813(200010)28:5<1362:FHPGUN>2.0.ZU;2-F
Abstract
Many pulsed power applications require short high-voltage pulses with a hig h-repetition rate. Conventional high-voltage discharge pulse-sn itches such as thyratrons, spark gap switches, and vacuum tube snitches have a short l ifetime, whereas the semiconductor switches have a long lifetime and high r eliability, The semiconductor switches, however, cannot be directly applied to fast high-voltage pulsed power generation due to their limited operatin g voltage ratings despite their relatively Long switching times. Therefore, they are used with voltage amplification and a pulse compression stage. This paper describes two pulse generators that use the semiconductor switch es and nonlinear capacitors: one is based an an opening switch (IGBT) and i nductive energy storage, the other is a combination of a closing snitch (RS D) and capacitive energy storage.