Many pulsed power applications require short high-voltage pulses with a hig
h-repetition rate. Conventional high-voltage discharge pulse-sn itches such
as thyratrons, spark gap switches, and vacuum tube snitches have a short l
ifetime, whereas the semiconductor switches have a long lifetime and high r
eliability, The semiconductor switches, however, cannot be directly applied
to fast high-voltage pulsed power generation due to their limited operatin
g voltage ratings despite their relatively Long switching times. Therefore,
they are used with voltage amplification and a pulse compression stage.
This paper describes two pulse generators that use the semiconductor switch
es and nonlinear capacitors: one is based an an opening switch (IGBT) and i
nductive energy storage, the other is a combination of a closing snitch (RS
D) and capacitive energy storage.