We investigated luminescence properties of highly Er-doped silicate gl
ass films prepared from doped silicate targets using RF magnetron sput
tering technique. The Er-doped films show a strong, room-temperature l
uminescence at 1.54 mu m wavelength. Fluorescence decay lifetime of up
to 9 ms was obtained with the three-component glass. A strong correla
tion was observed between the lifetime and the melting temperature of
glass over a broad range of host composition. The results indicate tha
t network modifiers, such as sodium ions, soften the silica glass netw
ork and thus alleviate formation of Er pairs or clusters. The Er-doped
thin-film waveguides fabricated on thick-oxide-grown silicon substrat
es show a propagation loss of less than 1 dB/cm. The relation of optic
al to electronic properties of Er-doped GaAs is modeled.