EVIDENCE FOR PHOTOLUMINESCENCE BAND IN P-TYPE AL0.67GA0.33AS RELATED TO NONEQUILIBRIUM DX- CENTERS

Authors
GLADKOV P ZDANSKY K
Citation
P. Gladkov et K. Zdansky, EVIDENCE FOR PHOTOLUMINESCENCE BAND IN P-TYPE AL0.67GA0.33AS RELATED TO NONEQUILIBRIUM DX- CENTERS, Journal of luminescence, 72-4, 1997, pp. 333-335
Citations number
5
Categorie Soggetti
Optics
Journal title
Journal of luminescence → ACNP
ISSN journal
00222313
Volume
72-4
Year of publication
1997
Pages
333 - 335
Database
ISI
SICI code
0022-2313(1997)72-4:<333:EFPBIP>2.0.ZU;2-0
Abstract
The photoluminescence of p-type Al0.67Ga0.33As grown by metal-organic vapor-phase epitaxy and doped with intrinsic carbon (approximate to 2 x 10(17) cm(-3)) is reported. Besides the lines related to the shallow impurities (C and Si), a structured broad band (BE) is observed 300 m eV below the band gap. The thermal, excitation density and the selecti ve excitation dependencies of the BE gave evidence that its origin is related to the DX- centres produced by optical recharging of Si+ atoms .