TIME-RESOLVED PHOTOLUMINESCENCE IN POROUS SILICON

Authors
KUDRNA J BARTOSEK P TROJANEK F PELANT I MALY P
Citation
J. Kudrna et al., TIME-RESOLVED PHOTOLUMINESCENCE IN POROUS SILICON, Journal of luminescence, 72-4, 1997, pp. 347-349
Citations number
5
Categorie Soggetti
Optics
Journal title
Journal of luminescence → ACNP
ISSN journal
00222313
Volume
72-4
Year of publication
1997
Pages
347 - 349
Database
ISI
SICI code
0022-2313(1997)72-4:<347:TPIPS>2.0.ZU;2-H
Abstract
We report a detailed study of red photoluminescence decay in porous si licon at temperatures 10-300 K. We concentrate on the slow component ( similar to 10(-4) s) which originates in the recombination of carriers trapped in the surface localized states. Analysis of the experimental data shows that photoluminescence dynamics is dominated by a thermall y activated nonradiative process and brings new information on its mic roscopic origin.