The binding energy of an exciton in a quantum well of polar semiconduc
tors is calculated including the interactions between the exciton and
four branches of interface optical modes besides the bulk longitudinal
optical modes confined in the well. The contributions of the bulk and
the interface modes of phonons to the binding energy are obtained by
a variational calculation. It is shown that the bulk and interface pho
nons play important roles in the heavy-hole case.