Equivalent circuit representation of arrays composed of Coulomb-coupled nanoscale devices: modelling, simulation and realizability

Technology and physics of discrete nanoscale electronic components are reas onably well understood, but there exists a gap between device physics and n anoelectronic circuit integration. Tn this paper, we propose a modelling an d simulation technique for integrated circuits composed of Coulomb-coupled nanodevices and subcircuits of metal-contacted devices. We assume that the Coulomb-coupled devices are far enough apart from each other that the overl ap between their wave functions can be ignored. The internal electronic dyn amics of the devices are described by quantum Markovian master equations, d escribing the dynamics of the devices as irreversible evolution of an open quantum system coupled to reservoirs. The electronic state of the devices a re characterized by a finite-dimensional time-varying real vector. The stat e of the nuclei is characterized by classical state variables such as posit ion and momenta. The Coulomb field generated by the device is described by the expectation value of the charge density approximated as multipole momen ts. Device-device couplings are determined by multipole interactions. In th is way, the integrated circuit dynamics can be described by a set of couple d nonlinear differential equations. This set of mixed quantum-classical sta te equations leads us to the introduction of equivalent circuits. We conclu de that integrated circuits composed of Coulomb-coupled and metal-contacted nanodevices do have circuit representations, thus circuit theory can be ap plied to build device models, to simulate and to design nanoelectronic inte grated circuits. Copyright (C) 2001 John Wiley & Sons, Ltd.