Modelling for the current-voltage characteristics of SOI submicrometre gate controlled hybrid transistors

An improved physical model for the collector current in the SOI submicromet re gate-controlled hybrid transistor (GCHT) is presented in this paper, wit h the bias-dependent dynamic threshold voltage of the GCHT redefined and ev aluated, considering the impact of carrier injection on the inversion degre e of the surface in the base. Many physical effects are taken into account in this model, including channel length modulation effect, mobility degrada tion effect, as well as high injection effect, source/drain series resistan ce and body-contact resistance effect, which may result in additional gate- body bias. The model is verified by comparison between calculated results, PISCES simulated results and experimental data.