ELECTRONIC CONFIGURATION OF THE GALLIUM AND ARSENIC VACANCIES IN GAAS

Authors
Citation
C. Carlone, ELECTRONIC CONFIGURATION OF THE GALLIUM AND ARSENIC VACANCIES IN GAAS, Journal of luminescence, 72-4, 1997, pp. 646-647
Citations number
3
Categorie Soggetti
Optics
Journal title
ISSN journal
00222313
Volume
72-4
Year of publication
1997
Pages
646 - 647
Database
ISI
SICI code
0022-2313(1997)72-4:<646:ECOTGA>2.0.ZU;2-V
Abstract
The gallium vacancy defect has been identified in the photoluminescenc e spectrum of irradiated gallium arsenide, and the arsenic vacancy by deep level transient spectroscopy. A model is presented which explains the optical observation of these defects.