NEW LINES OBSERVED IN PHOTOLUMINESCENCE FROM GAAS GROWN BY MOCVD

Authors
CIORGA M MISIEWICZ J TLACZALA M PANEK M VEJE E
Citation
M. Ciorga et al., NEW LINES OBSERVED IN PHOTOLUMINESCENCE FROM GAAS GROWN BY MOCVD, Journal of luminescence, 72-4, 1997, pp. 650-651
Citations number
5
Categorie Soggetti
Optics
Journal title
Journal of luminescence → ACNP
ISSN journal
00222313
Volume
72-4
Year of publication
1997
Pages
650 - 651
Database
ISI
SICI code
0022-2313(1997)72-4:<650:NLOIPF>2.0.ZU;2-7
Abstract
The photoluminescence (PL) spectra of MOCVD-grown GaAs samples have be en measured at 10 K, and for the most representative sample: PL spectr a were recorded from 10 to 150 K. Besides of the well-established tran sitions, a hitherto unreported peak was seen at 1.454 eV. The identifi cation of a line at 1.408 eV is also discussed.