I. Jaek et al., LUMINESCENCE AND MICROSTRUCTURE OF GA, IN AND TL CENTERS IN LABORATORY-DOPED NATURAL FELDSPARS, Journal of luminescence, 72-4, 1997, pp. 681-683
The doping of feldspars by Ga, In and Tl leads to the appearance of in
tense specific emission bands. Their spectra and decay kinetics were m
easured at 4-290 K in 2-8 eV spectral range. The lowest excited state
of the impurity centre proves to be related to the excited P-3 State o
f corresponding ns(2) ion. This is the reason for the long decay times
(similar to 10(-3)-10(-4) s at 4 K), sharply depending on temperature
. The higher excited states of the centres apparently are the activato
r-oxygen hybrid states. Monovalent ns(2) ions possibly substitute Naor K+ ions in the K(Na)AlSi3O8 lattice. As follows from the lattice st
ructure of alkali feldspars, they can have several different types of
nearest neighbours.