RELATION BETWEEN LUMINESCENCE AND ELECTRONIC SURFACE CHARACTERISTICS IN P-TYPE POROUS SILICON

Authors
WEISZ SZ PORRAS AR GOMEZ M MANY A GOLDSTEIN Y SAVIR E
Citation
Sz. Weisz et al., RELATION BETWEEN LUMINESCENCE AND ELECTRONIC SURFACE CHARACTERISTICS IN P-TYPE POROUS SILICON, Journal of luminescence, 72-4, 1997, pp. 729-730
Citations number
4
Categorie Soggetti
Optics
Journal title
Journal of luminescence → ACNP
ISSN journal
00222313
Volume
72-4
Year of publication
1997
Pages
729 - 730
Database
ISI
SICI code
0022-2313(1997)72-4:<729:RBLAES>2.0.ZU;2-V
Abstract
Measurements of photoluminescence, electronic surface states and effec tive surface area, at various stages of the anodization process, are p resented, The results show a behavior different from that observed on n-type porous Si.