A. Ohnishi et al., PULSE-ANNEALING STUDY OF PHOTO-STIMULATED LUMINESCENCE AND TRAPPED-HOLE STATES IN BAFBR-EU2+, Journal of luminescence, 72-4, 1997, pp. 775-777
Photo-stimulated luminescence (PSL) with F(Br-)-band light was studied
with a pulse annealing technique in the X-rayed BaFBr and BaFBr:Eu2crystals. It was found that the PSL band due to Eu3+ centers in BaFBr:
Eu2+ is kept unchanged for pulse annealing up to 280 K, though the one
due to O- centers in BaFBr comes to disappear after pulse annealing a
round 200 K. This clearly indicates that Eu2+ ion plays an important r
ole as the hole-trap in the image storage.