INFLUENCE OF THE ELECTRIC-FIELD ON THE EXCITONIC LUMINESCENCE OF EPITAXIAL GAN FILMS

Authors
NELSON DK KAGAN VD KALININA EV JACOBSON MA
Citation
Dk. Nelson et al., INFLUENCE OF THE ELECTRIC-FIELD ON THE EXCITONIC LUMINESCENCE OF EPITAXIAL GAN FILMS, Journal of luminescence, 72-4, 1997, pp. 865-866
Citations number
3
Categorie Soggetti
Optics
Journal title
Journal of luminescence → ACNP
ISSN journal
00222313
Volume
72-4
Year of publication
1997
Pages
865 - 866
Database
ISI
SICI code
0022-2313(1997)72-4:<865:IOTEOT>2.0.ZU;2-X
Abstract
Quenching and enhancement of exciton photoluminescence were observed w hen applying the external voltage to the Shottky barrier. The effect i s explained taking into account the ionization of free excitons by the electric field and voltage induced variation of the barrier width. Th e value of ionization electric field for free exciton E-0 = 10(5) V/cm is estimated.