NOVEL EXCITON-LIKE OPTICAL-TRANSITIONS IN ALGAAS GAAS SINGLE HETEROJUNCTIONS/

Authors
ZVARA M CUKR M GRILL R HLIDEK P KOUBELE V OSWALD J SOUBUSTA J
Citation
M. Zvara et al., NOVEL EXCITON-LIKE OPTICAL-TRANSITIONS IN ALGAAS GAAS SINGLE HETEROJUNCTIONS/, Journal of luminescence, 72-4, 1997, pp. 898-900
Citations number
6
Categorie Soggetti
Optics
Journal title
Journal of luminescence → ACNP
ISSN journal
00222313
Volume
72-4
Year of publication
1997
Pages
898 - 900
Database
ISI
SICI code
0022-2313(1997)72-4:<898:NEOIAG>2.0.ZU;2-I
Abstract
The photoconductivity and photoluminescence spectra measured on MBE-gr own modulation-doped AlGaAs/GaAs heterojunctions show a novel structur e consisting of several sharp excitonic-like peaks extended up to appr oximate to 30 meV above the bulk GaAs exciton recombination energy. Th eir two-dimensional (2D) nature has been confirmed by an external magn etic field angle dependence. The two proposed models assume localized centers of donor and acceptor nature concentrated at or near the inter face.