SHORT-TERM DEGRADATION OF POROUS SILICON LIGHT-EMITTING-DIODES

Authors
KNAPEK P LUTEROVA K KOCKA J FEJFAR A PELANT I LINNROS J LALIC N
Citation
P. Knapek et al., SHORT-TERM DEGRADATION OF POROUS SILICON LIGHT-EMITTING-DIODES, Journal of luminescence, 72-4, 1997, pp. 992-993
Citations number
6
Categorie Soggetti
Optics
Journal title
Journal of luminescence → ACNP
ISSN journal
00222313
Volume
72-4
Year of publication
1997
Pages
992 - 993
Database
ISI
SICI code
0022-2313(1997)72-4:<992:SDOPSL>2.0.ZU;2-4
Abstract
We report on two important features of light-emitting diodes based on a porous silicon p-n junction: Strong decrease of the electroluminesce nce intensity is observed for pulses longer than similar to 1 ms and t he influence of ambient gases on the LED operation is discussed.