ELECTROLUMINESCENCE AND DEEP-LEVEL TRANSIENT SPECTROSCOPIES OF MINORITY-CARRIER TRAPS IN GAP-N STRUCTURES WITH P-N-JUNCTIONS

More than 20 structures of GaP prepared by TDM were investigated by EL spectroscopy and DLTS. In one of the structures a strong broad EL ban d has been observed at 820 nm at 77 K, The intensity of the band has o n unusual behavior as it increases with increasing temperature from 77 to 260 K; and simultaneously the band shifts to higher energy. A hole trap at complemental energy appears in the structure and it is sugges ted that this trap is responsible for the EL band. In some other struc tures a weak broad EL band at 910 nm at 77 K is observed. This band is identical with the EL band reported as generated in the p-type layer of Fe-doped GaP structure and interpreted as due to Fe deep acceptor. A new minority-carrier trap at complemental energy has been found by D LTS.