Liquid metal ion source-produced germanium ions for maskless ion implantation

Authors
Ganetsos, T Aidinis, C Bischoff, L Mair, GLR Teichert, J Panknin, D Papadopoulos, I
Citation
T. Ganetsos et al., Liquid metal ion source-produced germanium ions for maskless ion implantation, J PHYS D, 34(3), 2001, pp. L11-L13
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN journal
00223727 → ACNP
Volume
34
Issue
3
Year of publication
2001
Pages
L11 - L13
Database
ISI
SICI code
0022-3727(20010207)34:3<L11:LMISGI>2.0.ZU;2-T
Abstract
We report on a preliminary investigation on the maskless implantation of Ge ions into Si for the production of Si1-xGex microstructures. The technique employs a focused ion beam system using a liquid metal alloy ion source. C losely spaced simple structures down to about 1 mum in width, with well-def ined boundaries, have been produced. On some of these structures, spreading resistance measurements were carried out.