We report on a preliminary investigation on the maskless implantation of Ge
ions into Si for the production of Si1-xGex microstructures. The technique
employs a focused ion beam system using a liquid metal alloy ion source. C
losely spaced simple structures down to about 1 mum in width, with well-def
ined boundaries, have been produced. On some of these structures, spreading
resistance measurements were carried out.