Molecular dynamics simulation of film growth by energetic aluminum clusterimpact

Citation
Jw. Kang et al., Molecular dynamics simulation of film growth by energetic aluminum clusterimpact, J KOR PHYS, 38(2), 2001, pp. 158-161
Citations number
17
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
03744884 → ACNP
Volume
38
Issue
2
Year of publication
2001
Pages
158 - 161
Database
ISI
SICI code
0374-4884(200102)38:2<158:MDSOFG>2.0.ZU;2-7
Abstract
Energetic aluminum cluster deposition has been investigated with a classica l molecular dynamics simulation and the Metropolis Monte Carlo simulation u tilizing the second-moment approximation of the tight-binding scheme, when a local area became a melting state on the surface around the impact point of an energetic aluminum cluster during a few ps, intermixing easily occurr ed and a good epitaxial film with bulk density was formed. For excellent fi lm growth using cluster impact, it is necessary to make the local area temp erature higher than the melting temperature on the surface around the impac t point of an energetic cluster.