Citation
Hm. Kim et al., Preparation of large area free-standing GaN substrates by HVPE using mechanical polishing liftoff method, MATER LETT, 47(4-5), 2001, pp. 276-280
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS LETTERS
ISSN journal
0167577X
→ ACNP
Volume
47
Issue
4-5
Year of publication
2001
Pages
276 - 280
Database
ISI
SICI code
0167-577X(200102)47:4-5<276:POLAFG>2.0.ZU;2-G
Abstract
In this study, 30 x 30 mm(2) free-standing GaN substrates were fabricated f
rom 400-450 mum thick GaN films grown on (0001) sapphire by hydride vapor p
hase epitaxy (HVPE). The thick films were separated from the substrate by m
echanical polishing liftoff method. using a diamond slurry, After liftoff,
the bow is only slight or absent in the resulting free-standing GaN wafers.
(C) 2001 Elsevier Science B.V. All rights reserved.