0.24-mu m CMOS technology and BSIM RF modeling for Bluetooth power applications

Authors
Chen, E Heo, D Laskar, J Bien, D
Citation
E. Chen et al., 0.24-mu m CMOS technology and BSIM RF modeling for Bluetooth power applications, MICROWAVE J, 44(2), 2001, pp. 142
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROWAVE JOURNAL
ISSN journal
01926225 → ACNP
Volume
44
Issue
2
Year of publication
2001
Database
ISI
SICI code
0192-6225(200102)44:2<142:0MCTAB>2.0.ZU;2-N
Abstract
This article reports the experimental evaluation of a 0.24-mum CMOS technol ogy for Bluetooth power applications. From load-pull measurements, the 0.24 -mum CMOS power transistor can deliver 23 dBm output power with 39 percent PAE at 2.4 GHz. A modified BSIM3v3 RF model with a new substrate network is presented for the design of Bluetooth power amplifiers. The simulation res ults of the proposed model show better agreement with the S-parameter and l oad-pull measurement results than several previously reported BSIM3v3 RF mo dels.