Crystallographic characterization of sputter-deposited epitaxial Nb-Cu-Co and Nb-Cu-permalloy multilayers using electron back-scatter diffraction patterns

Epitaxial Nb-Cu-Co and Nb-Cu-Permalloy(TM) (Py) multilayers have been grown on (11 (2) over bar0) sapphire substrates by sputter deposition. Electron backscatter diffraction patterns (EBSPs) have been used to characterize 'in dividual layers, while atomic force microscopy was used for studying the su rface topography. EBSPs have been demonstrated to be a viable technique for characterization of these thin sputtered films. EBSP results have shown th at the Nb films grow as high quality epitaxial single crystals with (110)(b cc), orientations. Cu films grown on the epitaxial Nb display two in-plane epitaxial variants corresponding to two stacking sequences of {111}(fcc) pl anes. These Cu variants take up the Nishiyama-Wasserman orientation relatio nship with the underlying Nb. Subsequent sputtering of Co or Fy on the epit axial Cu films results in the growth of two variants of 111(fcc) layers. Or ientation maps of the Cu, Co and Py films, which illustrate the size and di stribution of the growth variants, are presented.