Formation kinetics and behavior of dust particles below about 10 nm in size
, referred to as clusters, in silane capacitively-coupled RF plasmas are st
udied using double pulse discharge and photon-counting laser-light-scatteri
ng methods. Even under so-called device quality conditions, clusters of sim
ilar to 10(11) cm(-3) high compared to a plasma ion density of similar to 1
0(-9) cm(3) are found at t similar to 50 ms after the discharge initiation.
Clusters begin to be composed of two size groups at t similar to 10 ms. Th
e ones in the small size group have an almost constant average size of simi
lar to 0.5 nm during the discharge period, while the ones in the large size
group grow at a rate of similar to 4 nm/s. This result indicates that the
large clusters are nucleated by the small ones containing 3-4 Si atoms.
Various methods for suppressing cluster growth have also been studied using
two in situ cluster detection methods. Since species contributing to the i
nitial growth of clusters are principally produced in the radical productio
n region around the plasma/sheath boundary near the rf electrode, the pulse
discharge modulation which has the discharge-off period in one modulation
cycle longer than the diffusion time of clusters through the radical produc
tion region is effective in reducing the growth of clusters. Thermophoretic
force due to heating of the grounded electrode drives neutral clusters abo
ve a few nm in size toward the cool RF electrode which is at room temperatu
re. Periodical pulse discharge modulation is much more effective in reducin
g the cluster density when it is combined with grounded electrode heating.
Hydrogen dilution of a high H-2/SiH4 concentration ratio above about 5 is u
seful for suppressing cluster growth especially in the radical production r
egion near the RF electrode.