A. Zunger et al., Why are the conventionally-assumed high-pressure crystal structures of ordinary semiconductors unstable?, PHYS ST S-B, 223(2), 2001, pp. 369-378
Recent high-pressure X-ray experiments show that, contrary to traditional e
xpectations and numerous calculations, the NaCl structure is not present in
covalent semiconductors, the diatomic beta -Sn structure is absent in all
compound semiconductors, and the CsCl structure is not seen in ionic semico
nductors. We explain these systematic absences in terms of dynamical phonon
instabilities of the NaCl, beta -Sn, and CsCl crystal structures. Covalent
materials in NaCl structures become dynamically unstable with respect to t
he transverse acoustic TA[001] phonon, while ionic compounds in the beta -s
n structure exhibit phonon instabilities in the longitudinal optical LO[00
xi] branch. The latter lead to predicted new high pressure phases of octet
semiconductors. For InSb, we find no phonon instability that could prevent
the CsCl phase from forming, but for the more ionic GaP, GaAs, InP, and InA
s, we find that the CsCl phase is dynamically unstable at high pressures wi
th respect to TA[xi xi0] phonons. Analysis of the soft normal modes via "is
otropy subgroup" suggests two candidate structures that will replace the Cs
Cl structure at high pressure: the tP4 (B10) InBi-type and the oP4 (B19) Au
Cd-type. Experimental examination of these predictions is called for.