Strain-induced MI transition in n-Si and n-Ge: Physical mechanisms and transport phenomena

Authors
Budzulyak, SI Gorin, AE Ermakov, VM Kolomoets, VV Venger, EF Verma, P Yamada, M Liarokapis, E Tunstall, DP
Citation
Si. Budzulyak et al., Strain-induced MI transition in n-Si and n-Ge: Physical mechanisms and transport phenomena, PHYS ST S-B, 223(2), 2001, pp. 519-523
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
223
Issue
2
Year of publication
2001
Pages
519 - 523
Database
ISI
SICI code
0370-1972(200101)223:2<519:SMTINA>2.0.ZU;2-U
Abstract
The analysis of experimental data on the pressure and temperature dependenc es of conductivity, the current-voltage characteristics (IVC), and the pres sure dependence of the activation energy in n-Si and n-Ge crystals in the r egion of strain-induced metal-insulator transition (MIT) is presented. A re markable change of the effective mass of carriers in semiconductors caused by strain-induced transformation of the energy band structure is the main n ecessary condition for realization of this kind of metal-nonmetal transitio n.