Germanium with doubly-charged impurity of cold under hydrostatic pressure up to 7 GPa - Electronic structure and some zone parameters, kinetic characteristics of electrons

The specific resistance delta (P) and the Hall coefficient R(P) < 0 are inv estigated in dependence on hydrostatic pressure (P <less than or equal to> 7 Cpa) at room temperature in Ge(Au, Sb) partially populated at the 0 K dou ble-charge level of gold E-Au(2-). The characteristic parameters of charge carriers and pres sure coefficients of the energy intervals between the L-1 and Delta (1) edge subband of the conduction band and E-Au(2) level are de termined. The density-of-states electron effective mass at minimum (100) of the conduction band m(d Delta) = 6(2/3) (m parallel tom perpendicular to ( 2))(1/3) = 1.05m(0) are defined experimentally for the first time. It is sh own that Ge(Au2-) can be used for control of the hydrostatic pressure up to 10 GPa.