Semiconductor-metal transitions in some materials at high pressures up to 30 GPa

Authors
Shchennikov, VV
Citation
Vv. Shchennikov, Semiconductor-metal transitions in some materials at high pressures up to 30 GPa, PHYS ST S-B, 223(2), 2001, pp. 561-565
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
223
Issue
2
Year of publication
2001
Pages
561 - 565
Database
ISI
SICI code
0370-1972(200101)223:2<561:STISMA>2.0.ZU;2-L
Abstract
An approach is suggested for the investigation of pressure-induced semicond uctor-metal phase transitions in a wide group of materials based on both th e model of p-bonds and Peierls distortion of lattice and the experimental r esults of thermoelectrical and magnetoresistance measurements at high press ures P up to 30 GPa. Cubic sphalerite (HgSeS and HgTeS), sphalerite with 11 3 vacancy in cation sites (In2Tc3 acid Ga2Te3), trigonal chain semiconducto rs (Te and Se), It, and chalcogenides (Zn, Cd, Sm, Eu) an analyzed in the f rame of this approach.