Resonant tunneling and interface band mixing of X-electrons in GaAs/AlAs heterostructures

Recent research at Oxford is reviewed on resonant tunneling in type II GaAs /AlAs "double barrier" structures. In this work high pressure and high magn etic field, both parallel and perpendicular to the layers, play a key role. Our results include the first determination of the pressure dependence of the transverse effective mass in AlAs, a complete re-evaluation of the shap e of the camel's back dispersion, and the first observation of X-x-X-y inte rface band mixing.