The electronic structure of rare earth chalcogenides and pnictides is calcu
lated with the ab-initio self-interaction corrected local-spin-density appr
oximation (SIC-LSD). This approach allows both an atomic-like description o
f the rare earth f-electrons and an itinerant description of other electron
ic degrees of freedom. Specifically, different formal valencies of the rare
earth atom, corresponding to different f-shell occupancies, can be studied
and their energies compared, leading to a first-principles theory for. pre
ssure-induced valence transitions. SIC-LSD calculations for cerium monopnic
tides and monochalcogenides. Yb monochalcogenides, and EuS are presented. T
he observed equilibrium lattice constants are well reproduced assuming a tr
ivalent Cc configuration and divalent Eu and Yb configurations. The trends
in the high pressure behavior of these systems are discussed. With applied
pressure, isostructural phase transitions are found to occur in CeP and CeS
, caused by the delocalization of the Ce f-electron, while in the heavier C
c compounds, the structural B1 --> B2 transition happens before f-electron
delocalization occurs. Similarly, both Eu and Yb chalcogenides transfer to
trivalent configurations with pressure, in accordance with observation.