Pressure dependence of the barrier height in tunnel n-GaAs/Au junctions

Citation
Em. Dizhur et al., Pressure dependence of the barrier height in tunnel n-GaAs/Au junctions, PHYS ST S-B, 223(1), 2001, pp. 129-137
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
223
Issue
1
Year of publication
2001
Pages
129 - 137
Database
ISI
SICI code
0370-1972(200101)223:1<129:PDOTBH>2.0.ZU;2-P
Abstract
The theory of tunnel current-voltage (I-V) characteristics of metal-semicon ductor junctions based on the self-consistent solution of the Poisson equat ion allows to gel the Schottky-barrier height and the charged impurity conc entration directly from the tunneling data. This approach was applied to th e analysis of low-temperature experiments on tunneling under pressure up to 3 GPa in a piston-cylinder gauge. Here we present the barrier height versu s pressure for heavily doped n-GaAs(Te)/Au (N-e approximate to (5 - 7) x 10 (18) cm(-3)) tunnel junctions and compare the obtained pressure dependence of the Schottky barrier with the known behavior of the band gap under press ure taking into account the influence of the L- and X-valleys and DX center s.