Effects of confinement on the coupling between nitrogen and band states inInGaAs1-xNx/GaAs (x <= 0.025) structures: Pressure and temperature studies

We report photo-modulated reflectance studies under applied pressure and va riable temperature, and related calculations, that probe the influence of N -related resonant anti-bonding states on the electronic structure of dilute III-N-V quantum wells (QWs). Three InyGa1-yAs1-xNx/GaAs multiple QW sample s with N contents of 0-2.5% are investigated up to 85 kbar at 300 K, and fo r 300-10 K at 1 atm. While the temperature dependence is only minimally aff ected by the N content, the pressure shifts of the intersubband transition energies depend significantly on the percentage of N. The linear pressure c oefficients are much smaller than those of the InGaAs band gap. A ten-band k . p model is in broad accord with the observed pressure dependence: the p redicted non-linear shift is somewhat larger than measured.