The results of transverse magnetoresistance (MR) and Raman spectrum (RS) me
asurements (in the region 80-160 cm(-1)) of Hg1-lambdaTexS crystals (0.04 l
ess than or equal to x less than or equal to 0.6) at room temperature and h
igh pressure P up to 1.5 GPa are presented. The galvanomagnetic measurement
s show the change of electronic structure and charge carrier concentration
as the sulphur content is rising. The increasing of MR under P and, hence,
the increase of electron mobility agree with the certain model of electroni
c structure of gapless semiconductors. Three HgTe-like phonon Raman modes w
ere observed near about 90, 120 and 140 cm(-1), and one mode near 100 cm(-1
), which was shifted to lower frequencies in the sulphur-rich samples in ac
cordance with theoretical predictions. At P = 1.6 GPa, above the onset of p
ressure-induced phase, two alpha -HgS like peaks near 90 cm(-1) were observ
ed.