Depth profiles and electronic stopping powers for fluorine ions in F-19(+)-implanted KTN

Citation
Xd. Liu et al., Depth profiles and electronic stopping powers for fluorine ions in F-19(+)-implanted KTN, PHYS LETT A, 280(1-2), 2001, pp. 58-64
Citations number
21
Categorie Soggetti
Physics
Journal title
PHYSICS LETTERS A
ISSN journal
03759601 → ACNP
Volume
280
Issue
1-2
Year of publication
2001
Pages
58 - 64
Database
ISI
SICI code
0375-9601(20010212)280:1-2<58:DPAESP>2.0.ZU;2-N
Abstract
Range distributions for fluorine ions in F-19(+)-implanted potassium tantal ite niobate (KTN) in an energy range of 80-350 keV were measured by using t he F-19(p, alpha gamma)O-16 resonant nuclear reaction at E-R = 872.1 keV, w ith width Gamma = 4.2 keV. A proper convolution calculation method was used to extract the true distributions of fluorine from the experimental excita tion yield curves. The experimental range distribution parameters. R-p and DeltaR(p). were compared with those obtained from Monte Carlo simulation co des. The electronic stopping powers for F+ ion in KTN were derived through fitting the projected range distributions simulated by using TRIM/XLL code to the experimentally measured range distributions. It is shown that the el ectronic stopping cross sections obtained in this work agree well with thos e calculated by using TRIM90 and can be well described by the four-paramete r formulae. But they are systematically larger than the results obtained fr om TRIM98 code. (C) 2001 Published by Elsevier Science B.V.