Modeling of the relationship between implantation parameters and implantation dose during plasma immersion ion implantation

Plasma immersion ion implantation (PIII) has attracted wide interests since it emulates conventional ion-beam ion implantation (IBII) in niche applica tions. For instance, the technique has very high throughput, the implantati on time is independent of the sample size, and samples with an irregular sh ape can be implanted without complex beam scanning or sample manipulation. However. unlike conventional ion-beam ion implantation (IBII), prediction o f the implantation dose and consequent process optimization are very diffic ult without extensive experiments since the incident ion flux is related to the implantation parameters such as accelerating voltage, pulse duration, and so on in a complex manner. Even though individual parameters have been investigated. there has not been a unified and user-friendly model to numer ically predict the implantation dose under different plasma and processing conditions. In this letter, we present a one-dimensional analytical model t o simulate the effects of parameter variations on the incident ion dose and to predict the implantation dose. The derived model is quite simple and ap plicable to planar targets such as silicon wafers. It will be an invaluable tool to process engineers in microelectronics working on silicon-on-insula tor (SOI) formation by PIII and plasma doping. (C) 2000 Elsevier Science B. V. All rights reserved.