Impurity bound polaron in a cubic quantum dot

With the use of variational approach, we have studied the effect of the bul k LO-phonon on the impurity binding energy in a GaAs Quantum Dot. The charg e carrier (electron and ion)-phonon coupling is treated within the adiabati c approximation. Our results show that the binding energy decreases as the dot size increases and depends on the impurity position. The effect of elec tron phonon interaction enhances the binding energy.