Novel open-system integral boundary conditions for the time-dependent Schrodinger equation for resonant-tunneling diodes

Citation
Ai. Podlivaev et al., Novel open-system integral boundary conditions for the time-dependent Schrodinger equation for resonant-tunneling diodes, PHYS LOW-D, 11, 2000, pp. 111-123
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICS OF LOW-DIMENSIONAL STRUCTURES
ISSN journal
02043467 → ACNP
Volume
11
Year of publication
2000
Pages
111 - 123
Database
ISI
SICI code
0204-3467(2000)11:<111:NOIBCF>2.0.ZU;2-L
Abstract
We present a novel formulation of boundary conditions which model the inter action of open systems such as resonant-tunneling diodes with particle rese rvoirs at the device boundaries. These boundary conditions are non-Markovia n, i.e., at a certain moment of time they are dependent on the whole pre-hi story of the system. We further demonstrate that boundary conditions may be effectively incorporated into numerical simulations of resonant-tunneling diode characteristics by directly solving the time-dependent Schrodinger eq uation and that these boundary conditions make it possible to model both tr ansient and periodic processes in resonant-tunneling diodes and in other op en systems.