Size effect application in the field radiation detectors and Auger-transistors

Authors
Deck, T Kalganov, VD Mileshkina, NV Moscardini, A Ostroumova, EV
Citation
T. Deck et al., Size effect application in the field radiation detectors and Auger-transistors, PHYS LOW-D, 11, 2000, pp. 147-160
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICS OF LOW-DIMENSIONAL STRUCTURES
ISSN journal
02043467 → ACNP
Volume
11
Year of publication
2000
Pages
147 - 160
Database
ISI
SICI code
0204-3467(2000)11:<147:SEAITF>2.0.ZU;2-1
Abstract
Conditions for the appearance of the size effect in both the nearsurface re gion of a semiconductor field emitter and the metal-insulator-semiconductor heterostructures have been studied. The influence of quantum size effect o n the operating modes of the Auger-transistor as well as the radiation dete ctors based on the semiconductor field emitters are discussed.