To satisfy the demand fur increased signal transmission speed and device de
nsity in the next generation of multilevel integrated circuits, a material
with a permittivity less than 3 is needed, that has compatibility with copp
er and copper processing. The authors found that plasma polymerized octoflu
orocyclobutane (PPOFCB) is a smooth, transparent, film that adheres strongl
y to the substrate and has a relatively high fluorine to carbon (F/C) ratio
, indicative of a low permittivity. This paper considers the copper/PPOFCB
interface by investigating the effects of an OFCB plasma both on copper and
on the deposited PPOFCB. X-ray photoelectron spectroscopy (XPS) of copper
surfaces exposed to an OFCB plasma, for times as short as 1 s and as long a
s 30 min, was used to characterize the copper, the PPOFCB and the interface
between them.
During a 1 s OFCB plasma exposure, copper fluorination occurs, producing Cu
F (with a F ion peak appearing in the F-1, spectrum) as well as the deposit
ion of fluorocarbon species (with a CF, peak in the F-1, spectrum). During
the next few seconds of OFCB plasma exposure, the amount of fluorocarbon de
posited begins to dominate the surface, although oxidized copper and oxidiz
ed hydrocarbon contaminant are still observed. The copper substrate beneath
a 15 nm PPOFCB film is not detectable via XPS. The F/C ratio for PPOFCB ca
n be as high as 1.68 after brief deposition times (30 s), reaching a platea
u value of 1.5 after several more minutes of plasma exposure: this reductio
n in F/C to a plateau is associated with ion bombardment and vacuum UV defl
uorination. PPOFCB is a smooth, planarizing him, with plasma polymerization
occurring predominantly on the surface and reducing the RMS roughness from
0.97 to 0.46 nm for the copper substrate. (C) 2001 Elsevier Science Ltd. A
ll rights reserved.